4f hybridization and band dispersion in gadolinium thin films and compounds
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چکیده
"4f hybridization and band dispersion in gadolinium thin films and compounds"
منابع مشابه
Comparison of n-type Gd(2)O(3) and Gd-doped HfO(2).
Gd(2)O(3) and Gd-doped HfO(2) films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd(2)O(3) and Gd-doped HfO(2) films, respectively. In the case of Gd(2)O(3), strong hybridization with the O 2p band is demonstrated, and there is eviden...
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